| PART |
Description |
Maker |
| TIP100 TIP102 |
Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
SemiHow Co.,Ltd.
|
| TIP117 TIP115 TIP116 |
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| TIP117F |
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
| TIP117 |
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
| ZBS |
Cemented Resistors with Corrugated Ribbon, All welded construction, Power rating up to 500 watt, Corrugated ribbon construction aids rapid cooling, Available in adjustable design
|
Vishay
|
| 1N965 JANTX1N957B-1 1N960 1N985 1N963 1N967 JANTXV |
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 24 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 10 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 20 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 10 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 56 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 27 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
MVSTBW 2,5/21-ST 12 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA
Zener Voltage Regulator Diode
RES 348-OHM 0.1% 0.125W 25PPM THIN-FILM SMD-1206 TR-7-PA
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION
|
MICROSEMI CORP-LAWRENCE
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
http://
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
| ATC200B822MW50XT |
Rugged Construction
|
List of Unclassifed Manufacturers
|
| CDEIR6D31FNP-12MC CDEIR6D31FNP-1MC CDEIR6D31FNP-1R |
Ferrite core construction.
|
Sumida Corporation
|
| MM3Z18VS |
Planar Die Construction
|
TY Semiconductor Co., L...
|
| AUD311-16G-RBL AUD311-32G-RBL |
Mini COB construction
|
A-Data Technology
|
|
