| PART |
Description |
Maker |
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| TGS4301-EPU |
SPDT VPIN
High Power Ka-Band Absorptive SPDT Switch
|
TRIQUINT[TriQuint Semiconductor]
|
| MRF18085AL |
1805鈥?880 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N鈥揅hannel RF Power MOSFETs
|
MOTOROLA
|
| MRF18030A |
MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8 - 1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF5S9101NBR1 MRF5S9101NR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
| MRF18030BLSR3 MRF18030BSR3 MRF18030BR3 MRF18030BLR |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MRF18030ASR3 MRF18030ALSR3 MRF18030ALR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| ADP3408 ADP3408ARU-18 ADP3408ARU-25 ADP3408ARU-1.8 |
0.3-10.0V; GSM power management system. For GSM/DCS/PCS/CDMA handsets
Replaced by BQ29415 : Voltage Protection for 2, 3, or 4 Cell LiIon Batteries (2nd Lev Protection) 8-SM8 -25 to 85
|
AD[Analog Devices]
Analog Devices, Inc.
|
| MASWSS0091-DIE MASWSS0091SMB MASWSS0091 |
GaAs SP6T 2.5 V High Power Switch Dual / Tri / Quad-Band GSM Applications
|
MACOM[Tyco Electronics]
|
| MASW-000105 |
GaAs SP6T 2.5 V High Power Switch Dual- / Tri- / Quad-Band GSM Applications
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| UPG2409T6X UPG2409T6X-E2 UPG2409T6X-E2-A |
HIGH POWER SPDT SWITCH FOR WiMAXTM
|
NEC
|
