| PART |
Description |
Maker |
| AFT26H250W03SR6 AFT26H250W03S-24S |
RF Power LDMOS Transistors
|
NXP Semiconductors
|
| LET9060S |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| LET20015 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
|
ST Microelectronics
|
| LET21004 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
|
STMICROELECTRONICS[STMicroelectronics]
|
| AN1223 |
RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY
|
SGS Thomson Microelectronics
|
| LET9045S 9334 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
From old datasheet system
|
http://
STMICROELECTRONICS[STMicroelectronics]
|
| PTFB183404E PTFB183404F |
High Power RF LDMOS Field Effect Transistors 340 W, 1805 ?1880 MHz
|
Infineon Technologies AG
|
| MRFE6VP61K25GSR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 M |
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
| BLF7G22LS-100P |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
