PART |
Description |
Maker |
U20D60 U20D30 U20D40 U20D50 |
POWER RECTIFIERS(20A/300-600V) POWER RECTIFIERS(20A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
F16C60 F16C40 F16C30 F16C50 |
POWER RECTIFIERS(16A/300-600V) POWER RECTIFIERS(16A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
H16C60 H16C30 H16C40 H16C50 |
HIGH EFFICIENCY RECTIFIERS(16A,300-600V) 高效率整流二极管6A300 - 600V的) HIGH EFFICIENCY RECTIFIERS(16A/300-600V)
|
MOSPEC[Mospec Semiconductor]
|
U08A40 U08A60 U08A30 U08A50 |
FAST RECTIFIERS(8A/300-600V) FAST RECTIFIERS(8A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
U15A60 U15A50 U15A30 U15A40 |
FAST RECTIFIERS(15A/300-600V) FAST RECTIFIERS(15A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
IRFPC40 IRFPC40PBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.8A)
|
IRF[International Rectifier]
|
ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp. Microsemi Corporation
|
DS-308BNC DS-308N DS-308SMA DS-117308 DS-117PIN DS |
1-300 MHz, three-way power divider Three-Way Power Dividers 1300 MHz Three-Way Power Dividers 1 - 300 MHz 三路功率分配 - 300兆赫
|
MA-Com MACOM[Tyco Electronics] Honeywell International, Inc.
|
IRFBC20 |
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
IRF[International Rectifier]
|
IXGX64N60B3D1 IXGR48N60C3D1 IXGR48N60B3D1 IXGP48N6 |
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
|
IXYS Corporation
|
IRFBC40AS IRFBC40ASTRL IRFBC40ASTRR |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 1.2ohm,身份证\u003d 6.2A
|
IRF[International Rectifier] International Rectifier, Corp.
|