| PART |
Description |
Maker |
| F12C40 F12C60 F12C30 F12C50 |
POWER RECTIFIERS(12A,300-600V) 大功率整流器（第12A ,300 - 600V的）
|
Mospec Semiconductor, Corp.
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| F30D60 F30D30 F30D40 F30D50 |
POWER RECTIFIERS(30A/300-600V)
POWER RECTIFIERS(30A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
| H16C60 H16C30 H16C40 H16C50 |
HIGH EFFICIENCY RECTIFIERS(16A,300-600V) 高效率整流二极管6A300 - 600V的）
HIGH EFFICIENCY RECTIFIERS(16A/300-600V)
|
MOSPEC[Mospec Semiconductor]
|
| APT30M40LVFR APT30M40B2VFR APT30M40B2VFRG |
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V FREDFET
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT30M40B2VR APT30M40LVR APT30M40LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
POWER MOS V 300V 76A 0.040 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| TC1303B-AA1EUNTR TC1303B-AA0EUN TC1303B-AA2EUN TC1 |
500 mA Synchronous Buck Regulator, 300 mA LDO with Power-Good Output 500毫安同步降压稳压器，300 mA的LDO具有电源就绪输出
|
Yageo, Corp.
Microchip Technology, Inc.
Microchip Technology Inc.
|
| IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)
Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A)
CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）\u003d 1.2ohm，身份证\u003d 6.2A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFB9N60 IRFB9N60APBF |
Power MOSFET(Vdss=600V/ Rds(on)=0.75ohm/ Id=9.2A)
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
|
| APT6040 APT6040BN APT6045BN |
POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| IRFBC20 |
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
IRF[International Rectifier]
|
| IRFBC40AS IRFBC40ASTRL IRFBC40ASTRR |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 1.2ohm，身份证\u003d 6.2A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
600V N-Channel B-FET / Substitute of SSI4N60A
600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
