PART |
Description |
Maker |
UPD44164084F5-E40-EQ1 UPD44164364F5-E50-EQ1 |
18M-BIT DDRII SRAM 4-WORD BURST OPERATION 1800万位的SRAM 4条DDRII字爆发运
|
NEC, Corp.
|
UPD44164365F5-E50-EQ1 |
18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION 1800万位条DDRII SRAM的分离I / O 2字爆发运
|
NEC, Corp.
|
UPD44324364F5-E50-EQ2 UPD44324084 UPD44324084F5-E3 |
36M-BIT DDRII SRAM 4-WORD BURST OPERAT
|
NEC[NEC]
|
R1Q4A3618BBG-33R R1Q4A3636BBG-33R R1Q4A3618BBG-40R |
36-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
R1Q4A3636BBG-60R R1Q4A3618BBG-60R |
36-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation http://
|
K7I161882B |
(K7I163682B / K7I161882B) 1Mx18-bit DDRII CIO b2 SRAM
|
Samsung semiconductor
|
MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
M5M4V16169DTP-10 M5M4V16169DTP-7 M5M4V16169DTP-8 M |
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
MR27V852D |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM From old datasheet system
|
OKI
|
MR27V6452D |
4,194,304-Word x 16-Bit or 8,388,608-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM From old datasheet system
|
OKI
|
K7D801871B K7D801871B-HC37 K7D801871B-HC35 K7D8018 |
256Kx36 & 512Kx18 SRAM 1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|