| PART |
Description |
Maker |
| UPD44321182GF-A50 UPD44321182GF-A50Y UPD44321362GF |
32M-bit(2M-word x 16-bit) ZEROSB(TM) SRAM
32M-bit(1M-word x 36-bit) ZEROSB(TM) SRAM
|
NEC
|
| UPD4481162GF-A60 UPD4481162GF-A60Y UPD4481182GF-A6 |
8M-bit(512K-word x 16-bit) ZEROSB(TM) SRAM
8M-bit(512K-word x 18-bit) ZEROSB(TM) SRAM
8M-bit(256K-word x 32-bit) ZEROSB(TM) SRAM
8M-bit(256K-word x 36-bit) ZEROSB(TM) SRAM
|
NEC
|
| UPD4481182GF-A44 UPD4481182GF-A50 UPD4481182GF-A60 |
8M-BIT ZEROSB SRAM PIPELINED OPERATION 800万位ZEROSB SRAM的流水线操作
8M-BIT ZEROSB SRAM PIPELINED OPERATION
|
NEC, Corp.
NEC Corp.
|
| M5M5V5A36GP-85 M5M5V5A36GP M5M5V5A36GP-75 |
Memory>Fast SRAM>Network SRAM
18874368-BIT(524288-WORD BY 36-BIT) Flow-Through NETWORK SRAM
|
RENESAS[Renesas Electronics Corporation]
|
| AS7C33128FT32_36B AS7C33128FT36B-80TQIN AS7C33128F |
3.3V 128K x 32/36 Flow Through Synchronous SRAM 3.3 128K的x 32/36流通过同步SRAM
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 36 STANDARD SRAM, 8 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 6.5 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 36 STANDARD SRAM, 6.5 ns, PQFP100
128K X 32 STANDARD SRAM, 10 ns, PQFP100 14 X 20 MM, TQFP-100
LM3876 Overture™ Audio Power Amplifier Series High-Performance 56W Audio Power Amplifier w/Mute; Package: ISOLATED TO220; No of Pins: 11; Qty per Container: 20; Container: Rail
LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 3000; Container: Reel
LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 1000; Container: Reel
Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
Integrated Silicon Solution, Inc.
ALSC[Alliance Semiconductor Corporation]
|
| CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位（为512k × 36/1M × 18）流体系结构，通过与NoBLTM的SRAM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1383B-83BGC CY7C1383B-83BZC CY7C1383B-83AC CY7 |
512 36/1M 18 Flow-Thru SRAM 1M X 18 STANDARD SRAM, 10 ns, PQFP100
512 36/1M 18 Flow-Thru SRAM 1M X 18 STANDARD SRAM, 7.5 ns, PQFP100
512 36/1M 18 Flow-Thru SRAM 1M X 18 STANDARD SRAM, 10 ns, PBGA119
512 36/1M 18 Flow-Thru SRAM 1M X 18 STANDARD SRAM, 10 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| MC-222252AF9-B85X-BT3 MC-222252A-X |
MCP(32M-bit flash memory 4M-bit Low Power SRAM)
|
NEC
|
| MC-222262F9-B85X-BT3 MC-222262-X |
MCP(32M-bit flash memory 8M-bit Low Power SRAM)
|
NEC
|
| MT58L64L18F MT58L32L32F MT58L32L36F |
32K x 323.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM)
32K x 363.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出，流通式同步脉冲静态RAM)
64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K的18.3V的I / O的流量通过SyncBurst的SRAM兆，3.3V的输输出，流通式同步脉冲静态内存）
|
Micron Technology, Inc.
|
