| PART |
Description |
Maker |
| EDI9LC644V EDI9LC644V1310BC EDI9LC644V1312BC EDI9L |
128Kx32 SSRAM/1Mx32 SDRAM
|
White Electronic Designs Corporation
|
| EDI8C32128C WS128K32-XXX EDI8C32128LP17EI |
128Kx32 SRAM Module(低功耗CMOS12Kx32静态RAM模块（存取时5705555ns
128Kx32 SRAM Module(低功耗CMOS28Kx32静态RAM模块（存取时5705555ns
128Kx32 SRAM Module(低功耗CMOS12Kx32静态RAM模块（存取时57055555ns
128Kx32 SRAM Module(低功耗CMOS28Kx32静态RAM模块（存取时57205555ns 128Kx32 SRAM的模块（低功耗的CMOS28Kx32静态内存模块（存取时间15,17,20,25,35,45,55纳秒））
128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68
|
White Electronic Designs Corporation
TE Connectivity, Ltd.
|
| WED9LC6816V1310BI WED9LC6816V1512BI |
256K X 32 SSRAM/ 4M X 32 SDRAM 256 × 32的SSRAM / 4米32内存
|
Electronic Theatre Controls, Inc.
|
| EDI8G32130C |
128Kx32 Static RAM CMOS, High Speed Module(128Kx32 高速CMOS静态RAM模块)
|
White Electronic Designs Corporation
|
| AS5SS256K18DQ-10/IT AS5SS256K18DQ-10/XT AS5SS256K1 |
256K x 18 SSRAM - synchronous burst SRAM, flow-thru
256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through
256K x 18 SSRAM Synchronous Burst SRAM. Flow-Through 256 × 18的SSRAM同步突发静态存储器。流通过
|
Austin Semiconductor, Inc
|
| K4S283232E K4S283232E-TC1L K4S283232E-TC60 |
4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
4M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
4Mx32 SDRAM
|
SAMSUNG
|
| PC755M8 PC755M8VG300LE PC755M8VG350LE |
32-bit RISC PowerPC-based Multichip Module
RISC microprocessor. 8 Mbits: 128K x 72 SSRAM. Core frequency: 300 MHz/150 L2 cache.
RISC microprocessor. 8 Mbits: 128K x 72 SSRAM. Core frequency: 350 MHz/175 MHz L2 cache.
|
Atmel
|
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| AS5SS256K18DQ-9_XT AS5SS256K18 AS5SS256K18DQ-10_IT |
256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through
|
AUSTIN[Austin Semiconductor]
|
| HMD4M32M2EG-5 HMD4M32M2EG-6 |
16Mbyte(4Mx32) 72-pin SIMM EDO Mode, 4K Refresh, 5V
|
Hanbit Electronics Co.,Ltd.
|
