| PART |
Description |
Maker |
| ZXTN07045EFF |
45V - SOT23F / NPN high gain power transistor
|
Diodes
|
| ZXTN19020CFF ZXTN19020CFFTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
20V, SOT23F, NPN high gain power transistor
|
Diodes Incorporated
|
| ZXTN19020DFF ZXTN19020DFFTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
20V, SOT23F, NPN high gain power transistor
|
Diodes Incorporated
|
| FMMTL618 FMMTL618TA FMMTL618-15 |
NPN Low Sat Transistor
SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR
NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR 1250 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
List of Unclassifed Man...
Diodes Incorporated
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
| 2SC3746 2SA1469 2SA1469S 2SA1469Q 2SC3746R |
60V/5A High-Speed Switching Applications
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-220VAR
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | SOT-186 晶体管|晶体管|叩| 60V的五（巴西）总裁| 5A条一（c）|的SOT - 186
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| BFP520 Q62702-F1794 Q62702-F1491 |
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BC368 C62702-C747 |
NPN General Purpose Amplifier
NPN Silicon AF Transistor (High current gain High collector current)
From old datasheet system
|
SIEMENS AG
Fairchild Semiconductor
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| BFS481 Q62702-F1572 |
From old datasheet system
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at collector currents from 0.5 to 12 mA)
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BUD42D-D BUD42D-1 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 4A I(C) | TO-251AA
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| MJE18004D2 MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
