PART |
Description |
Maker |
JDP2S01T07 JDP2S01T |
UHF~VHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
JDP2S01E07 JDP2S01E |
UHF~VHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
1SV271 |
DIODE (VHF~UHF BAND RF ATTENUATOR APPLICATIONS)
|
Toshiba Semiconductor
|
TG2202F |
1.9GHz BAND ATTENUATOR (PHS DIGITAL CORDLESS TELEPHONE)
|
TOSHIBA[Toshiba Semiconductor]
|
JDP2S01E JDP2501E |
SILICON, PIN DIODE UHF~VHF BAND RF ATTENUATOR APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
JDP4P02U |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications
|
TOSHIBA[Toshiba Semiconductor]
|
AN1102 |
ST10 DIRECT MEMORY ACCESS USING MAC - APP NOTE - REV A - 5/11/98
|
SGS Thomson Microelectronics
|
MPAT-02000220-3706 MPAT-10701250-6020 MPAT-0750085 |
2000 MHz - 2200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.7 dB INSERTION LOSS-MAX 10700 MHz - 12500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 7500 MHz - 8500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.8 dB INSERTION LOSS-MAX 7900 MHz - 8400 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 7250 MHz - 7750 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 2100 MHz - 2700 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.5 dB INSERTION LOSS-MAX 17700 MHz - 20200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX 17300 MHz - 18100 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX 12750 MHz - 13250 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.5 dB INSERTION LOSS-MAX 5845 MHz - 6430 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
|
MITEQ, Inc.
|
TGL4201-EPU TGL4201-00-EPU TGL4201-02-EPU TGL4201- |
Wide-Band Fixed Attenuator Wideband Fixed Attenuators
|
TRIQUINT[TriQuint Semiconductor]
|
S3P72H8 |
The S3C72H8 single-chip CMOS microcontroller has been designed for very high performance using Samsungs state-of-the-art 4-bit product development app
|
http://
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