| PART |
Description |
Maker |
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| CY7C1387F-167BGC CY7C1387F-167BGI CY7C1387F-167BGX |
Replacement for Intersil part number 8100604EA. Buy from authorized manufacturer Rochester Electronics.
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 18兆位（为512k × 36 / 1兆位× 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor Corp.
|
| A28F400BR-TB A28F400BR-B AB28F400BR-T80 AB28F400BR |
4-MBIT (256K X 16/ 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
Toggle Switch; Circuitry:DPDT; Switch Operation:On-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:PCB; Features:Standard Actuator RoHS Compliant: Yes
4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-Mbit (256K x 16, 512K x 8) SmartVoltage boot block flash memory. Access speed 80 ns
|
Intel Corporation
Intel Corp.
|
| CY62157ELL-55ZSXE CY62157ELL-55BVXE CY62157ELL-45Z |
8-Mbit (512K x 16) Static RAM 512K X 16 STANDARD SRAM, 55 ns, PBGA48
8-Mbit (512K x 16) Static RAM 512K X 16 STANDARD SRAM, 45 ns, PDSO44
|
Cypress Semiconductor Corp.
|
| A28F400BX-B |
4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引导块闪速存储器)
|
Intel Corp.
|
| CY7C1012DV3307 CY7C1012DV33-8BGXC |
12-Mbit (512K X 24) Static RAM 512K X 24 STANDARD SRAM, 8 ns, PBGA119
|
Cypress Semiconductor, Corp.
|
| CY14B104MA-ZSP25XI CY14B104KA-ZS25XCT CY14B104KA C |
4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock
512K X 8 NON-VOLATILE SRAM, 20 ns, PDSO44
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1380D |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM(18-Mb (512K x 36/1M x 18)管道式SRAM) 18兆位（为512k × 36/1M × 18）流水线的SRAM18 - MB的（12k × 36/1M × 18）管道式的SRAM
|
Cypress Semiconductor Corp.
|
| 49LF002 SST49LF003A-33-4C-NH SST49LF003A-33-4C-WH |
MB 6C 6#20 SKT PLUG
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub 384K X 8 FLASH 3V PROM, 11 ns, PQCC32
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub 256K X 8 FLASH 3V PROM, 11 ns, PQCC32
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub 512K X 8 FLASH 3V PROM, 11 ns, PQCC32
|
Silicon Storage Technology Inc
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
36-Mbit QDR™-II SRAM 2-Word Burst Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Flow-through SRAM with NoBL™ Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
SPI Serial EEPROM SPI串行EEPROM
36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM
256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc.
Electronic Theatre Controls, Inc.
|
| CY62148DV30L CY62148DV30L-55ZSXI CY62148DV30LL CY6 |
4-Mbit (512K x 8) MoBL垄莽 Static RAM
4-Mbit (512K x 8) MoBL? Static RAM
|
Cypress Semiconductor
|
| CY62148DV30LL-55ZSXI CY62148DV30LL-55SXI CY62148DV |
4-Mbit (512K x 8) MoBLStatic RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
4-Mbit (512K x 8) MoBLStatic RAM 512K X 8 STANDARD SRAM, 70 ns, PDSO32
|
Cypress Semiconductor, Corp.
|
