| PART |
Description |
Maker |
| MF34M1-LZCATXX MF3257-LZCATXX MF3513-LZCATXX MF312 |
512Kb, 8/16-bit data bus static RAM card
128Kb, 8/16-bit data bus static RAM card
STATIC RAM CARDS
8/16-bit Data Bus Static RAM Card 16位产品数据总线静态存储器
256Kb, 8/16-bit data bus static RAM card
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216 |
30ns; 64K x 16 CMOS dynamic RAM with extended data output
35ns; 64K x 16 CMOS dynamic RAM with extended data output
40ns; 64K x 16 CMOS dynamic RAM with extended data output
45ns; 64K x 16 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
| K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| SL6609AKGNPDE SL6609AKGNPDS SL6609A |
Direct Conversion FSK Data Receiver
|
Mitel Networks Corporation
|
| SL6610 SL6610KG SL6610NPDE SL6610NPDS |
Direct Conversion FSK Data Receiver
|
ZARLINK[Zarlink Semiconductor Inc]
|
| SL6619 SL6619TP1Q SL6619KG SL6619TP1N |
Direct Conversion FSK Data Receiver
|
MITEL[Mitel Networks Corporation]
|
| BFR93AW |
NPN Silicon RF Transistor for low dis...
|
Infineon
|
| ICL7106 |
True Differential input and Reference, Direct Display
|
Estek Electronics Co. Ltd
|
| K4E16708112D K4E160811D K4E160811D-B K4E160811D-F |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
|
Samsung Electronic
|
| APD-128G032 |
Plasma Display Modules 128 x 32 Graphics Display with Drive Electronics and TTL Level Data Interface
|
Vishay Intertechnology,Inc.
|
