| PART |
Description |
Maker |
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| SKHI10-17 SKHI10_17 SKHI10/17 |
High Power IGBT Driver
|
Semikron International
|
| SKHI1005 SKHI10 SKHI10_12 SKHI10/12 |
High Power IGBT Driver
|
Semikron International
|
| OM9403SD |
25V 8A Single Channel Hi-Rel IGBT Gate Driver in a DP-10A package
IGBT GATE DRIVER For Driving IGBT Modules 600V and 1200V, 150A to 600A
|
IRF[International Rectifier]
|
| SGF23N60UFD SGF23N60UFDTU |
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 23 A, 600 V, N-CHANNEL IGBT
Ultra-Fast IGBT
Discrete, High Performance IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| MP4711 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
| CM150DU-12F |
IGBT MODULES HIGH POWER SWITCHING USE
150 A, 600 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| MG75J1ZS40 E002382 |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Silicon N channel IGBT(N沟道绝缘栅双极型晶体 N通道IGBT的（不适用沟道绝缘栅双极型晶体管）
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| 1SD210FI-FZ600R65KF1 |
SCALE High Voltage IGBT Driver
|
Concept
|
| 1SD210FI-FX200R65KF1 FZ200R65KF1 FD200R65KF1-K |
SCALE High Voltage IGBT Driver
|
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ETC
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