| PART |
Description |
Maker |
| IDT72V82L20PA IDT72V82L15PA 72V84_DS_9983 IDT72V85 |
4K x 9 DualAsync FIFO, 3.3V
3.3 Volt CMOS DUAL ASYNCHRONOUS FIFO DUAL 512 x 9, DUAL 1,024 x 9 DUAL 2,048 x 9, DUAL 4,096 X 9
From old datasheet system
3.3 Volt CMOS DUAL ASYNCHRONOUS FIFO DUAL 512 x 9 DUAL 1024 x 9 DUAL 2048 x 9 DUAL 4096 X 9
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| 5962-9317703MYX 5962-9317703MXX 5962-9317701MXX 59 |
x9 Asynchronous FIFO
Single/Dual/Quad, 28MHz, Low-Noise, Low-Voltage, Precision Op Amps X9热卖异步FIFO
|
Omron Electronics LLC Industrial Automation
|
| IC62LV5128LL IC62LV5128L IC62LV5128L-55B IC62LV512 |
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| STW5095T STW5095 |
Low Power Asynchronous Stereo Audio Codec with Integrated Power Amplifiers
|
STMICROELECTRONICS[STMicroelectronics]
|
| N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
|
ON Semiconductor
|
| SCC68681E1N40 SCC68681C1A44 SCC68681C1N40 SCC68681 |
Dual asynchronous receiver/transmitter (DUART)
Dual asynchronous receiver/transmitter 双异步接收器/发送器
|
NXP Semiconductors N.V.
|
| IDT7284L15 IDT7282L15PAI IDT7281L12 IDT7280L12 IDT |
ACB 5C 2#8 3#12 PIN PLUG
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9,DUAL 1,024 x 9, DUAL 2,048 x 9,DUAL 4,096 x 9, DUAL 8,192 x 9 1K X 9 BI-DIRECTIONAL FIFO, 15 ns, PDSO56
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9,DUAL 1,024 x 9, DUAL 2,048 x 9,DUAL 4,096 x 9, DUAL 8,192 x 9 CMOS双异步FIFO256 × 9，双512 × 9，双1,024 × 9，双2,048 × 9，双4,096 × 9，双8,192 × 9
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9,DUAL 1,024 x 9, DUAL 2,048 x 9,DUAL 4,096 x 9, DUAL 8,192 x 9 CMOS双异步FIFO56 × 9，双512 × 9，双1,024 × 9，双2,048 × 9，双4,096 × 9，双8,192 × 9
1K x 9 DualAsync FIFO, 5.0V
8K x 9 DualAsync FIFO, 5.0V
256 x 9 DualAsync FIFO, 5.0V
512 x 9 DualAsync FIFO, 5.0V
4K x 9 DualAsync FIFO, 5.0V
2K x 9 DualAsync FIFO, 5.0V
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT
|
| N02L163WN1AT2-55I N02L163WN1A N02L163WN1AB N02L163 |
2Mb Ultra-Low Power Asynchronous CMOS SRAM
|
etc
NANOAMP[NanoAmp Solutions, Inc.]
Electronic Theatre Controls, Inc.
|
| N01L6183AB27I N01L6183AB27IT N01L6183AT27I N01L618 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
ON Semiconductor
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| N02L163WN1A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit
|
NanoAmp Solutions
|
