PART |
Description |
Maker |
HN7G02FU |
TOSHIBA Multi Chip Discrete Device
|
TOSHIBA[Toshiba Semiconductor]
|
HN2E05J |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
Toshiba Corporation Toshiba Semiconductor
|
SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
AK49064SP-10 AK44064SP-10 AK44256SN-12 AK411024SRM |
64K X 9 MULTI DEVICE DRAM MODULE, 100 ns, SMA30 64K X 4 MULTI DEVICE DRAM MODULE, 100 ns, SMA22 256K X 4 MULTI DEVICE DRAM MODULE, 120 ns, SMA22 1M X 1 MULTI DEVICE DRAM MODULE, 150 ns, SMA22 128K X 1 MULTI DEVICE DRAM MODULE, 150 ns, CDIP18 64K X 2 MULTI DEVICE DRAM MODULE, 150 ns, CDIP18
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TPCP8J01 |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) Silicon NPN Epitaxial Type TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type MOSFET TPC Series
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
DPS128X16A3-85M DPS128X16H3-85M DPS128X16H3-85B DP |
256K X 8 MULTI DEVICE SRAM MODULE, 85 ns, CPGA50 CERAMIC, MODULE, SLCC, PGA-50 256K X 8 MULTI DEVICE SRAM MODULE, 85 ns, CQFP48 GULLWING, SLCC-48 256K X 8 MULTI DEVICE SRAM MODULE, 85 ns, CQIP48 SLCC-48
|
Twilight Technology, Inc.
|
AS8S512K32AQ1-25L_Q AS8S512K32P-17L/IT AS8S512K32P |
512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68 512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68 512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CPGA66 PGA-66 512K x 32 SRAM SRAM MEMORY ARRAY
|
Micross Components Austin Semiconductor
|
MF3128-MLDAP01 MF3256-MLDAP01 MF3512-MLDAP01 |
128K X 8 MULTI DEVICE SRAM CARD, 200 ns, XMA60 256K X 8 MULTI DEVICE SRAM CARD, 200 ns, XMA60 512K X 8 MULTI DEVICE SRAM CARD, 200 ns, XMA60
|
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CE201210-6N8J CE201210-5N6J CE201210-4N7J CE201210 |
IC,MOT,MC68HC908GR8CP, DIP-28, MCU FLASH 8BIT 8MHZ 4K IC,MCU,MC68HC908JB8ADW,8-BIT SOIC-28,21 I/O,3MHZ IC,MCU,MC68HC711E9CFN2,8-BIT 2MHz,PLCC52 8-BIT, OTPROM, 2.1 MHz, MICROCONTROLLER, PDIP20 IC,MCU,MC68HC908KX8CDW,8-BIT SOIC-16,13 I/O,8MHZ Multi-Layer Chip Inductors 1 ELEMENT, 0.12 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD Multi-Layer Chip Inductors 1 ELEMENT, 0.0056 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD Multi-Layer Chip Inductors 1 ELEMENT, 0.33 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD Multi-Layer Chip Inductors 1 ELEMENT, 0.0027 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD Multi-Layer Chip Inductors 1 ELEMENT, 0.0068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD Multi-Layer Chip Inductors 1 ELEMENT, 0.0082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD IC,MCU,MC68HC705C9ACFN,8-BIT PLCC-44,31 I/O,2MHZ 多层片式电感 Multi-Layer Chip Inductors 1 ELEMENT, 0.39 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns Inc. Bourns, Inc.
|
EMS256K8BMO2-55M EMS256K8BMO2-55D EMS256K8BMO6-55I |
256K X 8 MULTI DEVICE SRAM MODULE, 55 ns, CDMA32 256K X 8 MULTI DEVICE SRAM MODULE, 55 ns, PDMA32
|
OKI SEMICONDUCTOR CO., LTD.
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