| PART |
Description |
Maker |
| IS61LF12832-8.5TQI IS61LF12832-7.5TQI IS61LF12832- |
128K x 32, 128K x 36 synchronous flow-through static RAM
128K X 32 CACHE SRAM, 8.5 ns, PQFP100
|
INTEGRATED SILICON SOLUTION INC
|
| LCL1903-L |
MCM LNA
|
RFHIC
|
| LCL3504-L LCL1904-L |
MCM LNA
|
RFHIC
|
| LCL2304-L LCL1904-L |
MCM LNA
|
RFHIC
|
| LCL3712-L LCL3512-L |
MCM LNA
|
RFHIC
|
| LCL2103A-L |
MCM LNA
|
RFHIC
|
| AD10242-17 |
MCM A/D Converter
|
Analog Devices
|
| 79LV0832RPQK-20 79LV0832RT1QK-25 79LV0832RT2QK-20 |
CB 6C 6#16 SKT RECP WALL
8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM 256K X 32 EEPROM 3V, 250 ns, QFP96
8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM 256K X 32 EEPROM 3V, 200 ns, QFP96
|
Maxwell Technologies, Inc
|
| 5962-01533 UT8Q512K32-SWC 8Q512K32 UT8Q512K32 UT8Q |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
16Megabit SRAM MCM 16Megabit的SRAM亿立方米
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none.
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
|
Aeroflex Circuit Techno...
http://
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
|
| 28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32
POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32
150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32
Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
CONNECTOR ACCESSORY
Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
|
http://
Maxwell Technologies, Inc
|
| 79C0832XPQK-20 79C0832 79C0832RPQE-15 79C0832RPQE- |
8 Megabit (256K x 32-Bit) EEPROM MCM
|
MAXWELL[Maxwell Technologies]
|
| 79C0408RT4FH12 79C0408RT4FH15 79C0408RT4FH20 79C04 |
4 megabit (512k x 8-bit) EEPROM MCM
|
Maxwell Technologies
|
