| PART |
Description |
Maker |
| 89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位）低压亿立方米的SRAM
|
Maxwell Technologies, Inc
|
| CY7C1049-17VC CY7C1049 CY7C1049-20VM CY7C1049-15VC |
Plastic Connector Backshell; Enclosure Material:Polyester; Enclosure Color:Black; Features:For: 101XX-300VE Mini D Ribbon Solder Plugs; No. of Positions:14 RoHS Compliant: Yes 512K X 8 STANDARD SRAM, 20 ns, PDSO36
BACKSHELL, MDR, 20WAY, METAL; For use with:Mini D Ribbon 101XX-6000 EC Plug Connectors; Material:Aluminum; Colour:Nickel; Connector type:Backshell; Ways, No. of:20 RoHS Compliant: Yes 512K X 8 STANDARD SRAM, 20 ns, PDSO36
Plastic Connector Backshell; Enclosure Material:Plastic; Approval Bodies:UL, CSA; Enclosure Color:Beige; Leaded Process Compatible:No; No. of Positions:26; Peak Reflow Compatible (260 C):No RoHS Compliant: No
512K x 8 Static RAM
Memory : Async SRAMs
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| 5962-0151101TXC 5962-0151101QXC 5962-0151101 UT9Q5 |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 3E4(30krad(Si)).
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 3E4(30krad(Si)).
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 1E4(10krad(Si)).
UT9Q512K32 16Megabit SRAM MCM
UT9Q512K32 16Megabit SRAM MCM
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose none
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose none
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 1E4(10krad(Si)).
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 5E4(50krad(Si)).
|
AEROFLEX[Aeroflex Circuit Technology]
|
| CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100
CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的（256 × 36/512K × 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| CY7C149-25PC CY7C149-45PC |
Memory : Async SRAMs
|
Cypress
|
| LCL0912-L |
MCM LNA
|
RFHIC
|
| LCL3212-L |
MCM LNA
|
RFHIC
|
| LCL2304-L LCL1904-L |
MCM LNA
|
RFHIC
|
| LCL2302-L LCL2702-L |
MCM LNA
|
RFHIC
|
| LCL1512-L LCL1812-L |
MCM LNA
|
RFHIC
|
| LCL2603-L LCL3503-L |
MCM LNA
|
RFHIC
|
|
