| PART |
Description |
Maker |
| GT50J122 |
Current Resonance Inverter Switching Application
|
Toshiba Semiconductor
|
| GT30J122 |
4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING
|
Toshiba Corporation
Toshiba Semiconductor
|
| GT50G321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
|
TOSHIBA
|
| GT40Q322 |
Voltage Resonance Inverter Switching Application
|
Toshiba Semiconductor
|
| GT40Q32306 GT40Q323 |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
|
Toshiba Semiconductor
|
| APC-15S APC-12S |
5W Ul t raminiature Modular Swi tching Power Suppl ies
|
Astrodyne Corporation
|
| SKIIP04ACB066V1 |
Large Current 300mA CMOS LDO Regulators; Output voltage (V): 3.1; Output current (mA): 300; Supply voltage (V): 2.5 to 5.5; I/O voltage difference (mV): 60; Ripple rejection (dB): 60; Circuit current (µA): 65; Package: HVSOF6
3-phase bridge inverter
|
Semikron International
|
| MB3873PF MB3873 |
Multi-Resonance AC/DC Converter IC
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| AS8002 AS8002AQFP |
Solar Photovoltaic Inverter Measurement IC with Fast Over Current Detection
|
austriamicrosystems AG
|
