| PART |
Description |
Maker |
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| SSM3J01T |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| MTP2N80 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
| MRF8S7120NR3 |
RF Power Field Effect Transistor
|
Motorola
|
| MRF8S19260HR6 MRF8S19260HSR6 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MRF281 MRF281SR1 MRF281SR106 MRF281ZR1 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MRF8S18260H MRF8S18260HSR6 MRF8S18260HR6 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MRF8S18210WHS MRF8S18210WGHSR3 MRF8S18210WHSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3 |
RF POWER FIELD EFFECT TRANSISTORS
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| MRF282 MRF282ZR1 MRF282SR1 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
