| PART |
Description |
Maker |
| MTE8600N2 |
High Power Infrared Emitter
|
Marktech Corporate
|
| SFH4250 |
High Power Infrared Emitter (850 nm)
|
OSRAM GmbH
|
| SFH4140 |
High Power Infrared Emitter (940 nm)
|
OSRAM GmbH
|
| ASDL-4360 ASDL-4360-C22 |
High Power and High Speed Infrared Emitter (885nm) in PLCC-2 Package
|
AVAGO TECHNOLOGIES LIMITED
|
| MTE9460MT |
Peak Emission Wavelength: 950nm
High Power Infrared Emitter
|
Marktech Corporate
|
| VSMY7852X01-GS08 |
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Techno
|
Vishay Siliconix
|
| SFH4202 |
Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
| 16700 |
High-Speed Infrared Emitter with Integrated Drive Electronics
|
OptoDiode Corp
|
| Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487 |
From old datasheet system
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 镓铝砷红外光Lumineszenzdiode 880nm红外线发射器880镓铝砷纳
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| Q65111A0506 |
High Power Infrared Emitter (850nm) in SMR
|
OSRAM GmbH
|
| VSLY3850 |
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
| VSMY12850 |
High Speed Infrared Emitting Diodes, 850 nm,Surface Emitter Technology
|
Vishay Siliconix
|
