PART |
Description |
Maker |
OL6201N-A10 |
MQW Laser Diode Cooled Dil Module (1625 nm /-10 nm, 1 mW) 量子阱半导体激光器冷却季利模块625纳米/ -10纳米毫瓦 MQW Laser Diode Cooled Dil Module (1625 nm /-10 nm 1 mW)
|
OKI SEMICONDUCTOR CO., LTD. OKI[OKI electronic componets] OKI electronic components
|
SPLMY81S9 |
Passively Cooled Diode Laser Bar, 140 W cw at 808 nm
|
OSRAM GmbH
|
SPLMN81S9 |
Passively Cooled Diode Laser Bar, 150 W qcw at 808 nm
|
OSRAM GmbH
|
S1300-5MG-FW S1300-5MG-BL |
Un-cooled Laser diode with MQW structure Wide operation temperature range
|
Roithner LaserTechnik GmbH
|
SLD323V SLD323V-21 SLD323V-24 |
807 nm, LASER DIODE 798 nm, LASER DIODE High Power Density 1W Laser Diode
|
SONY
|
NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
NX7663JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
NX6314EH |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
Renesas Electronics Corporation
|
SLD324ZT-21 SLD324ZT |
High-Power Density 2W Laser Diode 798 nm, LASER DIODE M-272, 12 PIN
|
SONY NXP Semiconductors N.V.
|
NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|
NX8349TB |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|