| PART |
Description |
Maker |
| SPLMY81S9 |
Passively Cooled Diode Laser Bar, 140 W cw at 808 nm
|
OSRAM GmbH
|
| SPLMN81S9 |
Passively Cooled Diode Laser Bar, 150 W qcw at 808 nm
|
OSRAM GmbH
|
| SPLMN81X2 |
808 nm, LASER DIODE
Passively Cooled Diode Laser Bar, 40 W cw at 808 nm
|
OSRAM GmbH
|
| SPLE20N81G2 |
Actively Cooled Diode Laser Bar, 1200 W cw at 808 nm
|
OSRAM GmbH
|
| LSC2110-622-ST LSC2110-622 LSC2110-622-BI LSC2110- |
2.5 mW 14 Pin DIL Cooled Laser Module
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| C484 |
(C48x) 2.5 G-Bits Cooled Laser Transmitters
|
Agere Systems
|
| NX8369TS |
LASER DIODE 1 625 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Labs
|
| NX7437 |
LASER DIODE 1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7537BF-AA |
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6510GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| NX8349XK NX8349YK NX8349TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
