| PART |
Description |
Maker |
| 2SB1151-T60-T 2SB1151L-T60-T 2SB1412-TN3-F-R 2SB14 |
NPN SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
HIGH VOLTAGE HIGH SPEED SWITCHING
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
|
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| MP6901 |
4 A, 80 V, 6 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
Power Transistor Module Silicon Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching
High Power Switching Applications / Hammer Drive
|
TOSHIBA[Toshiba Semiconductor]
|
| HAT2215R HAT2215R-EL-E HAT2215RJ HAT2215RJ-EL-E |
Transistors>Switching/MOSFETs
Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FS70VSJ-06F FS70VSJ-06F-A1 FS70VSJ-06F-T11 |
70 A, 60 V, 0.0083 ohm, N-CHANNEL, Si, POWER, MOSFET
High-Speed Switching Use Nch Power MOS FET
Transistors>Switching/MOSFETs
|
Renesas Electronics Corporation
|
| 2SK2885L 2SK2885S 2SK2885 |
Power switching MOSFET
Silicon N Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| BD9120HFN BD9106FVM BD9106FVM09 BD9107FVM BD9109FV |
2 A SWITCHING REGULATOR, 1200 kHz SWITCHING FREQ-MAX, PDSO8 5 X 6 MM, ROHS COMPLIANT, SON-8
High-efficiency Step-down Switching Regulators with Built-in Power MOSFET
|
Rohm
|
| 2SB1202L-X-T6C-K 2SB1202L-X-TM3-T 2SB1202L-R-TN3-K |
HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-252
HIGH CURRENT SWITCHING APPLICATION 大电流开关应
HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-126
HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-251
|
UTC[Unisonic Technologies]
友顺科技股份有限公司
Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
??『绉???′唤??????
|
| MP420807 |
High Power High Speed Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
|
Toshiba Semiconductor
|
| MG75Q1JS40 E002405 |
Silicon N channel IGBT(N沟道绝缘栅双极型晶体 N通道IGBT的（不适用沟道绝缘栅双极型晶体管）
N CHANNEL IGBT (HIGH POWER SWITCHING / CHOPPER APPLICATIONS)
N CHANNEL IGBT (HIGH POWER SWITCHING CHOPPER APPLICATIONS)
From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING, CHOPPER APPLICATIONS)
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| QM75DY-24B |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
