PART |
Description |
Maker |
STP55NF06 STP55NF06FP STB55NF06 STB55NF06-1 -STP55 |
N-CHANNEL 60V - 0.015 OHM - 50A TO-220/TO-220FP/I2PAK/D2PAK STRIPFET II POWER MOSFET N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D2PAK STripFET II POWER MOSFET N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/DPAK STripFET II POWER MOSFET N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D?PAK STripFET⑩ II POWER MOSFET N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D?PAK STripFETII POWER MOSFET N沟道60V 0.015欧姆- 50ATO-220/TO-220FP/I巴基斯坦/数?巴基斯坦STripFET⑩二功率MOSFET N-CHANNEL POWER MOSFET N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D?PAK STripFETII POWER MOSFET N沟道60V 0.015欧姆- 50A条TO-220/TO-220FP/I巴基斯坦/数?巴基斯坦STripFET⑩二功率MOSFET N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D??AK STripFET??II POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V. ST Microelectronics
|
STB55NF06T4 STB55NF0606 STB55NF06-1 STP55NF06 STP5 |
N-channel 60V - 0.015Ω - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET II Power MOSFET N-channel 60V - 0.015ヘ - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET⑩ II Power MOSFET
|
STMicroelectronics
|
FDD13AN06A010 FDD26AN06-F085 |
N-Channel PowerTrench? MOSFET 60V, 50A, 13.5mΩ
|
Fairchild Semiconductor
|
IRFZ44 |
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,50A I(D),TO-220AB From old datasheet system
|
Samsung Electronics Inc
|
IRCZ44 |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package Hexfet? Power MOSFET Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50A)
|
IRF[International Rectifier]
|
FDD10AN06A0NL |
Discrete Automotive N-Channel UltraFET Trench MOSFET, 60V, 50A, 0.0105 Ohms @ VGS = 10V, TO-252/DPAK Package
|
FAIRCHILD SEMICONDUCTOR CORP
|
HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4 |
18-STAGE STATIC SHIFT REGISTER MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Drain-Source Breakdown Voltage:60V 18 -阶段静态移位寄存器
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics ST Microelectronics
|
FDS5351 |
60V N-Channel PowerTrench MOSFET; Package: SO-8; No of Pins: 8; Container: Tape & Reel 6.1 A, 60 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel PowerTrench㈢ MOSFET 60V, 6.1A, 35mヘ N-Channel PowerTrench? MOSFET 60V, 6.1A, 35mΩ
|
Fairchild Semiconductor, Corp.
|
IRFZ48PBF |
HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018Ω , ID = 50A )
|
International Rectifier
|
FDD8453LZ |
N-Channel PowerTrench? MOSFET 40V, 50A, 6.7mΩ N-Channel PowerTrench㈢ MOSFET 40V, 50A, 6.7mヘ
|
Fairchild Semiconductor
|
FDD8447L08 |
Fast Switching 40V N-Channel PowerTrench? MOSFET 40V, 50A, 8.5mΩ 40V N-Channel PowerTrench㈢ MOSFET 40V, 50A, 8.5mヘ
|
Fairchild Semiconductor
|