| PART |
Description |
Maker |
| DS2030W |
3.3V Single-Piece 256k Nonvolatile SRAM
|
Maxim
|
| 24AA02-I/OT 24LC02B-I/MS 24LC02B-E/P 24LC02B-I/ST |
SERIAL EEPROM|256X8|CMOS|TSSOP|8PIN|PLASTIC
SERIAL EEPROM|256X8|CMOS|TSOP|6PIN|PLASTIC
3.3V Single-Piece 1Mb Nonvolatile SRAM
3.3V Single-Piece 256Kb Nonvolatile SRAM
Single/Dual/Triple/Quad DS3/E3 Single-Chip Transceivers
Single/Dual/Triple/Quad ATM/Packet PHYs for DS3/E3/STS-1 串行EEPROM的| 256X8 |的CMOS |双酯| 8引脚|塑料
Single-Piece 1Mb Nonvolatile SRAM 串行EEPROM的| 256X8 |的CMOS | TSSOP封装| 8引脚|塑料
2k x 8 3V/5V Operation Static RAM 串行EEPROM的| 256X8 |的CMOS | TSSOP封装| 8引脚|塑料
Single/Dual/Triple/Quad ATM/Packet PHYs with Built-In LIU 串行EEPROM的| 256X8 |的CMOS |专科| 8引脚|塑料
|
Microchip Technology, Inc.
|
| HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM
256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
|
SIEMENS AG
|
| DS2050W |
3.3V Single-Piece 4Mb Nonvolatile SRAM
From old datasheet system
|
Maxim
|
| IDT71V3576YS133BG IDT71V3576YS133BGI IDT71V3578YS1 |
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 3.8 ns, PBGA165
|
Integrated Device Technology, Inc.
http://
Integrated Device Techn...
|
| MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器)
4分（12k × 8/256K × 16）位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
| GS88132BT-150IV |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS880E32AT-250 |
512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 32 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| MX27C2000A MX27C2000AMC-10 MX27C2000AMC-12 MX27C20 |
2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 150 ns, PDIP32
2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 90 ns, PDIP32
Single Output LDO, 3.0A, Fixed(2.5V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 125
Single Output LDO, 3.0A, Fixed(3.3V), Fast Transient Response, Low Quiescent Current 5-TO-220 -40 to 125
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| IS61VPS25636A-200TQ2I IS61VPS25636A-250TQI |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 256K X 36 CACHE SRAM, 3.1 ns, PQFP100
256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 256K X 36 CACHE SRAM, 2.6 ns, PQFP100
|
Integrated Silicon Solution, Inc.
|
| IDT71V25761 IDT71V25781 IDT71V25781S166PF IDT71V25 |
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.5 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.3 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PBGA119
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.5VI / O的流水线输出，脉冲计数器，单周期取消
|
Integrated Device Technology, Inc.
|
| CY7C1041V33 CY7C1041V33-15ZC CY7C1041V33-20ZC CY7C |
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 17 ns, PDSO44
From old datasheet system
GIGATRUE 550 CAT6 MOLDED COMPONENT, RED 7FT
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 25 ns, PDSO44
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
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