PART |
Description |
Maker |
FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管)
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INTERSIL[Intersil Corporation] Intersil, Corp.
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FSYA254R4 FSYA254D FSYA254D1 FSYA254D3 FSYA254R FS |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射,抗SEGR N沟道功率MOSFET Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
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INTERSIL[Intersil Corporation] Intersil, Corp.
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IRHE9230 IRHE93230 2048 |
200V, P-Channel Surface Mount Radiation Hardened Power MOSFET(200V,P沟道表贴型抗辐射功率MOS场效应管) 00V,P通道表面安装抗辐射功率MOSFET00V的电压,P沟道表贴型抗辐射功率马鞍山场效应管) From old datasheet system RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
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International Rectifier, Corp.
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5962-04238 5962-04239 5962-04240 5962-04241 5962-0 |
10W Total Output Power 28 Vin 3.3 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04238 10W Total Output Power 28 Vin 5 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04239 10W Total Output Power 28 Vin 12 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04240 10W Total Output Power 28 Vin 15 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04241 10W Total Output Power 28 Vin /-5 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04242 10W Total Output Power 28 Vin /-12 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04243 10W Total Output Power 28 Vin /-15 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04244
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International Rectifier
|
HS-2510RH 5962D9568601VPA HS9-2510RH-Q HS7-2510RH- |
Radiation Hardened High Slew Rate Operational Amplifier Radiation Hardened High Slew Rate Operational Amplifier OP-AMP, 8000 uV OFFSET-MAX, 12 MHz BAND WIDTH, CDIP8 CAP TANT LOESR 330UF 10V 20% SMD Radiation Hardened High Slew Rate
Operational Amplifier(抗辐射高输出电压转换速率、低偏置电流运算放大
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Intersil, Corp. Intersil Corporation
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IRHNA7264SE |
250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package RADIATION HARDENED POWER MOSFET
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International Rectifier
|
HS-82C54RH HS1-82C54RH HS1-82C54RH-8 HS1-82C54RH-Q |
From old datasheet system Radiation Hardened CMOS Programmable Interval Timer Radiation Hardened CMOS RProgrammable Interval TimerS
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INTERSIL[Intersil Corporation]
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JANSR2N7498T2 IRHF57230SE |
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) 抗辐射功率MOSFET的通孔(到39
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IRF[International Rectifier] International Rectifier, Corp.
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HS-1115RH FN4098 5962F9678501VPA HFA1115IP |
Buffer, Output Limiting, Closed-Loop, 225MHz, 1135V/s, Programmable Gain, Rad-Hard From old datasheet system Radiation Hardened, High Speed, Low Power Output Limiting, Closed-Loop-Buffer Amplifier Radiation Hardened/ High Speed/ Low Power Output Limiting/ Closed-Loop-Buffer Amplifier Radiation Hardened, High Speed, Low Power
Output Limiting, Closed-Loop-Buffer Amplifier(抗辐射高速、低功耗、输出限定的锁相环缓冲放大器)
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INTERSIL[Intersil Corporation]
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IRHF7110 IRHF8110 IRHF3110 IRHF4110 IRHF4110NBSP |
RADIATION HARDENED POWER MOSFET THRU-HOLE 抗辐射功率MOSFET的通孔 From old datasheet system 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
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IRF[International Rectifier]
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IRH7450SE 2036 |
Simple Drive Requirements RADIATION HARDENED POWER MOSFET From old datasheet system 500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-204AA package
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International Rectifier
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