| PART |
Description |
Maker |
| K4C89083AF-ACF5 K4C89083AF-ACF6 K4C89083AF-ACFB K4 |
288Mb x18 Network-DRAM2 Specification
|
Samsung Electronic
|
| IS49NLS18160 |
288Mb (x9, x18) Separate I/O RLDRAM 2 Memory
|
Integrated Silicon Solution, Inc
|
| IS49RL36160 |
576Mb: x18, x36 RLDRAM 3 Features
|
Integrated Silicon Solution, Inc
|
| IBM0418A81MLAB-4 IBM0418A81MLAB-5 IBM0418A81MLAB-3 |
x36 Fast Synchronous SRAM
x18 Fast Synchronous SRAM x18快速同步SRAM
|
Electronic Theatre Controls, Inc.
|
| IBM0436A8ACLAA-4H IBM0436A4ACLAA-4H IBM0436A8ACLAA |
x36 Fast Synchronous SRAM
x18 Fast Synchronous SRAM x18快速同步SRAM
|
HIROSE ELECTRIC Co., Ltd.
|
| UPD4382362GF-A75B UPD4382322GF-A75B UPD4382182GF-A |
x18 Fast Synchronous SRAM
x16 Fast Synchronous SRAM x16快速同步SRAM
x36 Fast Synchronous SRAM x36快速同步SRAM
x32 Fast Synchronous SRAM X32号，快速同步SRAM
|
Electronic Theatre Controls, Inc.
|
| GMM27316230ETG GMM27316233ENTG-7K |
x72 SDRAM Module x72内存模块
16Mx72|3.3V|75/7K|x18|SDR SDRAM - Registered DIMM 128MB 16Mx72 | 3.3 | 75/7K | x18 | SDRAM的特别提款权-注册128MB的内
|
ITT, Corp.
Mini-Circuits
|
| AS7C33128PFS18A-183TQI AS7C33128PFS16A-166TQI AS7C |
x18 Synchronous SRAM
x18 SRAM
x16 Fast Synchronous SRAM x16快速同步SRAM
|
Alliance Semiconductor, Corp.
DB Lectro, Inc.
Glenair, Inc.
|
| GMM77332280CNTG GMM77316280CTG |
32Mx72|3.3V|5/6|x36|FP/EDO DRAM - 256MB Buffered DIMM 32Mx72 | 3.3 | 5 / 6 | x36 |计划生育/ EDO公司的DRAM - 256MB的缓冲DIMM
16Mx72|3.3V|5/6|x 18|FP/EDO DRAM - 128MB Buffered DIMM
|
Linear Technology, Corp.
|
| IDT72T51236 IDT72T51236L5BB IDT72T51236L5BB8 IDT72 |
4Q x36 512K Multi-Queue, 2.5V
4Q x36 1M Multi-Queue, 2.5V
4Q x36 2M Multi-Queue, 2.5V
|
IDT
|
| IDT72T51233 IDT72T51233L5BB IDT72T51233L5BB8 IDT72 |
4Q x18 512K Multi-Queue, 2.5V
4Q x18 1M Multi-Queue, 2.5V
4Q x18 2M Multi-Queue, 2.5V
|
IDT
|
