PART |
Description |
Maker |
1N963B 1N965B 1N962B 1N970B 1N960B 1N961B 1N966B 1 |
Half Watt Zener(耗散功率.5瓦的齐纳二极 27 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 Half Watt Zeners
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
MBRH20060 MBRH20060R MBRH240100R |
High Power Schottky Rectifiers - Half Pak Devices
|
America Semiconductor
|
MBRH12060R MBRH12045R |
High Power Schottky Rectifiers - Half Pak Devices
|
America Semiconductor
|
ESAD33-02C |
16 Ampere Heatsink Unipolar Ultra Fast Recovery Half Bridge Rectifiers
|
Thinki Semiconductor Co...
|
ESAD33-02D |
16 Ampere Heatsink Doubler Ultra Fast Recovery Half Bridge Rectifiers
|
Thinki Semiconductor Co...
|
YG902D2 |
10 Ampere Dual Doubler Polarity Ultra Fast Recovery Half Bridge Rectifiers
|
Thinki Semiconductor Co...
|
IR53HD420 IR53HD420-P2 IR53H420 IR53H420-P2 |
HALF BRIDGE BASED PRPHL DRVR, PSIP7 SELF-OSCILLATING HALF BRIDGE(82.40 k) 500V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 package
|
IRF[International Rectifier]
|
FAN73933MX FAN73933 |
Half Bridge Gate Driver HALF BRIDGE BASED PRPHL DRVR, PDSO14 0.150 INCH, ROHS COMPLIANT, SOIC-14 Half-Bridge Gate Drive IC
|
Fairchild Semiconductor, Corp.
|
10A10 10A8 10A4 10A2 10A05-10A10 10A6 |
PLASTIC SILICON RECTIFIERS Silicon General Rectifiers
|
HY ELECTRONIC CORP.
|
JD100005-17 JD10001-17 JD10002 JD10004 JD10006 JD1 |
SILICON RECTIFIERS GLASS PASSIVATED RECTIFIERS
|
HY ELECTRONIC CORP.
|
1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE (1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction) IC REG VOLT 4.8V 240MA SOT-23 Rectifiers(Rugged glass package/ using a high temperature alloyed construction) Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器(坚固的玻璃封装,采用高温合金建设 Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
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PHILIPS[Philips Semiconductors] http:// NXP Semiconductors N.V.
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