| PART |
Description |
Maker |
| RFP-100200N4X50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| RFP-20N50TPR |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| RFP-20N50TP |
0 MHz - 4000 MHz 50 ohm RF/MICROWAVE TERMINATION
Aluminum Nitride Terminations
|
ANAREN INC
Anaren Microwave
|
| PO6-TMP-025-1 PO6-TMLP-025 FL-TMP-025-1 TNC-TMP-1 |
Non-reflective Terminations (N, TNC, SSMA, POB, FL, and PO6) 非（不适用，跨国公司，多址，平衡原则，佛罗里达州，并PO6反射终止
Non-reflective Terminations (N / TNC / SSMA / POB / FL / and PO6)
Non-reflective Terminations (N TNC SSMA POB FL and PO6)
Non-reflective Terminations (N/ TNC/ SSMA/ POB/ FL/ and PO6)
|
HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
|
| AML056P4511 |
Gallium Nitride (GaN)
|
Microsemi
|
| NPT1012 NPT1012-15 |
Gallium Nitride 28V, 25W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| NPT2018 NPT2018-15 |
Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT
Industry Standard Plastic Package
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
List of Unclassifed Man...
|
| RFP-400-50T 400-50T |
Flanged Terminations
|
Anaren Microwave
|
| RFP-100-50TW |
Flanged Terminations
|
Anaren Microwave
|
| MFE211 MFE212 |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS N沟道双栅氮化硅钝化马鞍山场效应晶体管
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
