| PART |
Description |
Maker |
| TN6Q04 |
ExPD (Excellent Power Device) Quasi-Resonant Switching Power Supply ExPD
|
Sanyo Semicon Device
|
| TN5D41 |
ExPD (Excellent-Performance Power & RF Device) Separately-Excited Step-Down Switching Regulator (5V Output type)
|
Sanyo Semicon Device
|
| TN8D41A |
ExPD (Excellent-Performance Power & RF Device) Separately-Excited Step-Down Switching Regulator (5V Output type)
|
Sanyo Semicon Device
|
| IPD040N03LG IPS040N03LG |
OptiMOS?3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
OptiMOS庐3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
|
Infineon Technologies AG
|
| KI5935DC |
TrenchFET Power MOSFETS Low rDS(on) Dual and Excellent Power Handling In A Compact Footprint
|
TY Semiconductor Co., Ltd
|
| 160MDS |
Three - Phase Bridge Rectifier Excellent power volume ratio
|
Naina Semiconductor ltd.
|
| 90MDS |
Three - Phase Bridge Rectifier Excellent power volume ratio
|
Naina Semiconductor ltd.
|
| ACT200A13 |
miniature SMD Watch Crystal with excellent low power consumption
|
Advanced Crystal Technology
|
| IPP041N12N3G IPI041N12N3G |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
|
Infineon Technologies AG
|
| IPI075N15N3G |
OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
|
Infineon Technologies AG
|
| IPB038N12N3G |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
|
Infineon Technologies AG
|
