PART |
Description |
Maker |
JXWBLA-T-1000-10000-30 |
Low Noise Medium Power Amplifier
|
American Accurate Components, Inc.
|
TC1201 |
Low Noise and Medium Power GaAs FETs
|
Transcom, Inc.
|
TC1101 |
Low Noise and Medium Power GaAs FETs
|
Transcom, Inc.
|
TC2381 |
Low Noise and Medium Power Packaged GaAs FETs
|
Transcom, Inc.
|
APM1950-P29-13 |
Low Noise and High OIP3 Medium Power Amplifier Module
|
Advanced Semiconductor Busi...
|
2SC5347 |
High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifiers Applications 高频半功率输出级,低噪声输出放大器中的应 High-Frequency Semi-Power Output Stage/ Low-Noise Medium Output Amplifiers Applications
|
Sanyo Electric Co., Ltd. Sanyo Semicon Device
|
CFS0103-SB08 CFS0103-SB-0G00 |
0.1-10.0 GHz Low Noise, Medium Power X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
|
MIMIX BROADBAND INC
|
CFS0303-SB07 CFS0303-SB PB-CFS0303-SB-00A0 PB-CFS0 |
0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package
|
Mimix Broadband
|
AGB3300 AGB3300_REV_2.1 AGB3300S24Q1 |
50OHM HIGH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER From old datasheet system Gain Block Amplifiers The AGB3300 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] Anadigics Inc
|
BAT14-099 Q62702-A3461 BAT1499 |
RES, SMD, 18 OHM, 5%, 1/4W, RMF Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
ISL6566CR ISL6566IR ISL6566CRZ |
Single Output LDO, 500mA, Adj. (1.3 to 6.5V), Low Noise 8-SOIC -40 to 125 Dual Low-Noise Wide-Bandwidth Precision Amplifier 8-TSSOP -40 to 85
|
Intersil Corporation
|