| PART |
Description |
Maker |
| NT5DS32M8AW-8B NT5DS64M4AT-8B NT5DS32M8AT-75B NT5D |
256Mb Double Data Rate SDRAM
|
ETC[ETC]
|
| EM44BM1684LBC-37FE EM44AM1684LBC-37FE EM448M1684LB |
256Mb (4M×4Bank×16) Double DATA RATE 2 SDRAM
256Mb (4M】4Bank】16) Double DATA RATE 2 SDRAM
|
Eorex Corporation
|
| K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM 256Mb的NAND闪存56Mb移动SDRAM
|
Samsung Semiconductor Co., Ltd.
|
| EM48AM1684VTE-6F EM48AM1684VTE-6FE EM48AM1684VTE-7 |
256Mb (4M隆驴4Bank隆驴16) Synchronous DRAM
256Mb (4M×4Bank×16) Synchronous DRAM
|
Eorex Corporation
|
| EM484M1684VTC-7FE EM484M1684VTC-8FE EM484M1684VTC- |
256Mb (4MBank6) Synchronous DRAM
256Mb (4M??Bank??6) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
| EM484M1684VBA-7FE EM484M1684VBA-75FE EM484M1684VBA |
256Mb (4MBank6) Synchronous DRAM
256Mb (4M??Bank??6) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
| MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| ISS-8 |
VDE-insulated Allen wrench with double-layer insulation, for double the safety
|
PHOENIX CONTACT
|
| NX3DV42GM NX3DV42GU |
Dual high-speed USB 2.0 double-pole double-throw analog
|
NXP Semiconductors
|
| 1300940219 |
Standard Duty Support Grip, Double Eye, Closed Mesh, Double Weave
|
Molex Electronics Ltd.
|
| 1300940223 |
Standard Duty Support Grip, Double Eye, Closed Mesh, Double Weave
|
Molex Electronics Ltd.
|
