PART |
Description |
Maker |
1N3163 1N3162 1N3174 1N3176 1N3166 1N3167 |
Diode Switching 150V 240A 2-Pin DO-9 Diode Switching 100V 240A 2-Pin DO-9 Diode Switching 1KV 300A 2-Pin DO-9 Diode Switching 1.4KV 240A 2-Pin DO-9 Diode Switching 300V 240A 2-Pin DO-9 Diode Switching 350V 240A 2-Pin DO-9
|
New Jersey Semiconductor
|
1N4392 1N4404 1N4411 1N4421 1N4402 1N4405 1N4403 1 |
DIODE SWITCHING DIODE 0.5A 2DO-17 Diode Switching 75V 0.25A Automotive 2-Pin SOD-323 T/R Diode Zener Single 68V 5% 1.5W 2-Pin DO-41 Diode Rectifier Bridge Single 200V 10A
|
New Jersey Semiconductor
|
BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS1 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching Latest Silicon Discretes - Switching Diode for high speed switching Silicon Switching Diode 硅开关二极管
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BYW52-TR BYW54-TR BYW54-TAP |
DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode AVALANCHE DIODE SOD57 STD-E2 Diode Switching 600V 2A 2-Pin SOD-57 Ammo
|
Vishay Semiconductors
|
CPD74 |
Switching Diode Monolithic Isolated Quad Switching Diode Chip
|
Central Semiconductor Corp
|
BAS116LT1D BAS116LT3G BAS116LT1G |
Switching Diode Switching Diod 0.2 A, 75 V, SILICON, SIGNAL DIODE, TO-236AB
|
ON Semiconductor
|
BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
CPD80V10 |
Switching Diode High Voltage Switching Diode Chip
|
Central Semiconductor Corp
|
Q62702-A1050 BAS16W |
Silicon Switching Diode (For high speed switching applications) 0.25 A, SILICON, SIGNAL DIODE From old datasheet system
|
SIEMENS AG Siemens Semiconductor Group
|
FE3B FE3D FE3C |
Diode Switching 100V 3A 2-Pin Case G-4 Diode Switching 200V 3A 2-Pin Case G-4 Diode Switching 150V 3A 2-Pin Case G-4
|
New Jersey Semiconductor
|
CMDD7006 |
SMD Switching Diode Single: High Voltage SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35 SWITCHING DIODE
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|