| PART |
Description |
Maker |
| 2SA1091 E000470 |
TRANSISTOR (HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SA109107 2SA1091 |
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
Toshiba Semiconductor
|
| 2SA1091 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
TOSHIBA
|
| 2SC3672 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL APPLICATIONS, PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS
|
TOSHIBA
|
| C7390-16 C7390 C7390-01 C7390-06 C7390-11 C7390-02 |
X-Ray Line Sensor Camera
Effective X-ray tube voltage range:40 to 160kV; resolution: 512mm:1280pixels; 256mm:640pixels; W-ray line sensor camera
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| Z900T |
COLD CATHODE TRIGGER TUBE
|
NXP Semiconductors
|
| R6504 R4504 |
Spectral responce:300-650nm; between anode and cathode:2300Vdc; 0.1mA; photomultiplier tube
|
HAMAMATSU[Hamamatsu Corporation]
|
| EG3012 |
Power MOS tube / IGBT gate driver chip tube
|
EGmicro
|
| BAV70LT1D BAV70LT1 BAV70LT1-D BAV70LT3 |
Small Signal Common Cathode
Monolithic Dual Switching Diode Common Cathode
|
ONSEMI[ON Semiconductor]
|
| L9181-02-15 |
130 kV MICROFOCUS X-RAY SOURCE
|
Hamamatsu Corporation
|
| S8193 |
Si photodiode Detector for X-ray monitors
|
Hamamatsu Corporation
|
