| PART |
Description |
Maker |
| RCR150BX12 RCR150BX16 RCR150BX20 RCR150BX24 FR500A |
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1.2KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR84 晶闸管|反向导电| 600V的五（DRM）的|00VAR84
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR50
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200AB
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|TO-200VAR50
|
Rochester Electronics, LLC
|
| 5SHX04D4502 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| H20R1202 |
Reverse Conducting IGBT
|
Infineon Technologies
|
| IHW20N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW20N120R2 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHD10N60RA |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW20N135R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHW30N90R08 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW30N160R2 |
TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode
|
Infineon Technologies AG
|
| 5SHZ08F6000 |
Reverse Blocking Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| AD71056 AD71056AR AD71056ARZ AD71056AR-RL AD71056A |
Energy Metering IC with Integrated Oscillator and Reverse Polarity Indication
|
Analog Devices
|
| ARA2005 ARA2005S8P0 ARA2005S8P1 |
The ARA2005 is a monolithic GaAs device designed to provide the reverse path amplification and output level control functions in ...
Reverse Path Amplifiers
Reverse Amplifier with Step Attenuator
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
