| PART |
Description |
Maker |
| EMD56164P EMD56164P-60 EMD56164P-75 |
256M: 16M x 16 Mobile DDR SDRAM
|
Emerging Memory & Logic Solutions Inc
|
| HM5425801B |
256M SSTL_2 interface DDR SDRAM(256M SSTL_2接口 DDR 同步DRAM) 256M DDR SDRAM的接口SSTL_256M SSTL_2接口的DDR同步DRAM）的
|
Hitachi,Ltd.
|
| HYB18RL25616AC-4 HYB18RL25616AC-5 HYB18RL25632AC-5 |
16M X 16 DDR DRAM, PBGA144
Specialty DRAMs - 256M (8Mx32) 200MHz
Specialty DRAMs - 256M (16Mx16) 200MHz
Specialty DRAMs - 256M (16Mx16) 250MHz
|
INFINEON TECHNOLOGIES AG
|
| EDD2532DGBH-TT EDD2532DGBH-6CTT-F EDD2532DGBH-7FTT |
256M bits DDR Mobile RAM WTR (Wide Temperature Range)
256M bits DDR Mobile RAM?/a> WTR (Wide Temperature Range)
|
Elpida Memory
|
| EMD12324PV EMD12324PV-60 EMD12324PV-75 |
512M: 16M x 32 Mobile DDR SDRAM
|
Emerging Memory & Logic Solutions Inc
|
| K4X51323PC-8G |
16M x32 Mobile-DDR SDRAM
|
Samsung semiconductor
|
| K4X56163PE-LFG K4X56163PE-LG |
16M x16 Mobile DDR SDRAM
|
Samsung Electronic
|
| H5MS2562JFR-E3M H5MS2562JFR-J3M H5MS2562JFR-L3M |
Mobile DDR SDRAM 256Mbit (16M x 16bit)
|
Hynix Semiconductor
|
| EDJ1104BBSE-DG-F EDJ1104BBSE-DJ-F EDJ1108BBSE-DJ-F |
1G bits DDR3 SDRAM
256M X 4 DDR DRAM, 0.4 ns, PBGA78
256M X 4 DDR DRAM, 0.3 ns, PBGA78
|
Elpida Memory
ELPIDA MEMORY INC
|
| HYB25D256160BF-7 HYB25D256160BEL-7F |
16M X 16 DDR DRAM, 0.75 ns, PBGA60
16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
INFINEON TECHNOLOGIES AG
|
| HY5TQ1G431ZNFP-H8 HY5TQ1G431ZNFP-H7 HY5TQ1G431ZNFP |
256M X 4 DDR DRAM, 0.255 ns, PBGA82 FBGA-82
256M X 4 DDR DRAM, 0.225 ns, PBGA82 FBGA-82
64M X 16 DDR DRAM, 0.3 ns, PBGA100
64M X 16 DDR DRAM, 0.255 ns, PBGA100
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| HMP125S6EFR8C-C4 HMP125S6EFR8C-S5 HMP125S6EFR8C-S6 |
256M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
200pin Unbuffered DDR2 SDRAM SO-DIMMs
|
HYNIX SEMICONDUCTOR INC
Hynix Semiconductor, Inc.
|
