| PART |
Description |
Maker |
| IRF420-423 IRF421 IRF422 IRF423 IRF822 MTP2N45 IRF |
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V N沟道功率MOSFET.0甲，450 V/500 V
Circular Connector; Body Material:Plastic; Series:Trident TNM Series; Connector Shell Size:14; For Use With:Neptune Circular Connectors
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| AD800904 AD8009ACHIPS AD8009JRT-R2 AD8009JRT-REEL |
1 GHz, 5,500 V/?Low Distortion Amplifier
1 GHz, 5,500 V/µs Low Distortion Amplifier
1 GHz, 5,500 V/Я Low Distortion Amplifier
1 GHz, 5,500 V/ Low Distortion Amplifier
1 GHz, 5,500 V/?/a> Low Distortion Amplifier
1 GHz, 5,500 V/µs Low Distortion Amplifier; Package: SOT-23; No of Pins: 5; Temperature Range: Commercial 1 CHANNEL, VIDEO AMPLIFIER, PDSO5
1 GHz, 5,500 V/µs Low Distortion Amplifier; Package: SOIC; No of Pins: 8; Temperature Range: Industrial 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
|
Analog Devices, Inc.
|
| MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC
Motorola, Inc
ON Semiconductor
|
| FDG6313N FDG6313NNL |
25V Dual N-Channel, Digital FET 500 mA, 25 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
|
| STX25NM50N STP25NM50N STW25NM50N STF25NM50N STB25N |
N-channel 500 V, 0.11 Ω, 22 A MDmesh?/a> II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
N-channel 500 V, 0.11 Ω, 22 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
22 A, 500 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
STMicroelectronics
|
| 1N957B ON0020 1N958B 1N968B 1N965B 1N963B 1N961B |
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35灏??,10V榻?撼?靛?锛?????绾崇ǔ??????)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,12V齐纳电压，玻璃齐纳稳压二极管) 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,15]V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,20V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,7.5V齐纳电压，玻璃齐纳稳压二极管)
From old datasheet system
|
ON Semiconductor
|
| NTR4003N NTR4003NT1G NTR4003NT3G |
30V N-Channel PowerTrench MOSFET 500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Power MOSFET 30 V, 0.56 A. Single N-Channel SOT-23 Package; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23
|
3M Company
ON Semiconductor
|
| APT30F50B |
N-Channel FREDFET 30 A, 500 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB
|
Microsemi, Corp.
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| IXTH30N50 |
MegaMOS FET 30 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Discrete MOSFETs: Standard N-channel Types
|
IXYS, Corp.
IXYS Corporation
|
| IRF830 FN1582 |
4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET
From old datasheet system
4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
|
