| PART |
Description |
Maker |
| 636ST89E HMC636ST8911 HMC636ST89E |
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| AS190-73 |
PHEMT GaAs IC High Linearity 3 V Control SPDT Switch 0.1-2 GHz
PHEMT GaAs IC High Linearity 3 V Control SPDT Switch 0.1? GHz
|
Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| SPF-2000 |
Low Noise High Linearity pHEMT GaAs FET 0.1 - 12 GHz Operation
|
SIRENZA[SIRENZA MICRODEVICES]
|
| AS188-92 |
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC-2 GHz
|
Skyworks Solutions
|
| RC0402FR-07220RL MMG20271HT1 GRM155R61A104K01D GJM |
Enhancement Mode pHEMT Technology (E-pHEMT) High Linearity Amplifier
|
Freescale Semiconductor, Inc
|
| AS219-321 |
AS219-321:PHEMT GaAs IC High Linearity 3 V T/R SP3|DC-6 GHz Plastic Packaged and Chip|SPST AS219 - 321：PHEMT的砷化镓集成电路高线3室SP3的|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
|
Alpha Industries, Inc.
|
| LP3000SOT89-3 LP3000SOT89 LP3000SOT89-1 LP3000SOT8 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| EB1500DFN-AJ FPD1500DFN1 |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
http://
Filtronic Compound Semiconductors
|
| MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT
Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT
GALLIUM ARSENIDE PHEMT
|
MOTOROLA[Motorola, Inc]
|
