| PART |
Description |
Maker |
| K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44
From old datasheet system
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| CMP0817BA8-F70I CMP0817BA8-I |
512K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| EM6163FR32AS-45L EM6163FU16AS-45L EM6163FV8AS-45L |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| EM640FU8E |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| EM641FT8V |
512K x8 bit Low Power Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| HY62SF16804B HY62SF16804B-C HY62SF16804B-DFC HY62S |
RES, 33, 1/2W, TKF, 5%, 2010
512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM
|
Hynix Semiconductor Inc.
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| K6F4008S2DFAMILY |
512K x 8bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| AS6C8008 |
512K X 8 BIT LOW POWER 1024K X 8 BIT SUPER LOW POWER CMOS SRAM
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
|
| MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 |
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40
IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR
4M (512K X 8) BIT
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| W963A6BBN W963A6BBN80I W963A6BBN70 W963A6BBN70E W9 |
Low Power Mobile Products
512K WORD X 16 BIT LOW POWER PSEUDO SRAM
|
WINBOND[Winbond]
Winbond Electronics
|
| IS62WV51216BLL-55BLI IS62WV51216ALL-70XI IS62WV512 |
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 12k × 16低电压，超低功耗的CMOS静态RAM
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 55 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
