| PART |
Description |
Maker |
| SGD04N60 |
Fast S-IGBT in NPT-technology( NPT 技术中的快S-IGBT) 9.4 A, 600 V, N-CHANNEL IGBT, TO-252AA
|
Infineon Technologies AG
|
| SID150N12 |
NPT IGBT Modules
|
Sirectifier Semiconductors
|
| SID100N12 |
NPT IGBT Modules
|
Sirectifier Semiconductors
|
| SII50N12 |
NPT IGBT Modules
|
Sirectifier Semiconductors
|
| SII100N06 |
NPT IGBT Modules
|
Sirectifier Semiconduct...
Sirectifier Semiconductors
|
| SDI400N12 |
NPT IGBT Modules
|
http://
Sirectifier Semiconductors
|
| SKM150GB063D SKM150GB063D06 |
Superfast NPT-IGBT Modules
|
Semikron International
|
| SKM50GB063D10 |
Superfast NPT-IGBT Modules
|
Semikron International
|
| SKM150GB063D |
Superfast NPT-IGBT Modules
|
SEMIKRON[Semikron International]
|
| VIO125-12P1 VID125-12P1 VDI125-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules 138 A, 1200 V, N-CHANNEL IGBT
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| SKW30N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
|
SIEMENS AG
|
| SKA06N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT)
|
SIEMENS AG
|
