PART |
Description |
Maker |
OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流,高电压,1000V , 10A,N沟道,MOS场效应管(高能容量)) 高电流,高电000V0安培N沟道,MOSFET的高能能力(大电流,高电压,1000V0A条,沟道来说,MOS场效应管(高能容量) HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on) 500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package 100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package 600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package 200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
2SK2347 |
N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications
|
SANYO
|
HAT2058R09 HAT2058R-EL-E |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, PLASTIC, SOP-8 Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc. Renesas Electronics Corporation
|
INK0001AX08 INK0001AC1 INK0001AM1 INK0001AU1 INK00 |
High speed switching Silicon N-channel MOSFET
|
Isahaya Electronics Corporation
|
HAT2035R HAT2035R-EL-E |
0.5 A, 150 V, 5.5 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
BF999 Q62702-F1132 |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz/ preferably in FM applications) From old datasheet system Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
HS56021 HS56021TZ-E |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
HS54097TZ-E |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJL6020DPK RJL6020DPK-00-T0 |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|