| PART |
Description |
Maker |
| CM300HA-28H |
Single IGBTMOD 300 Amperes/1400 Volts 300 A, 1400 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| ST3230C18R0 ST3230C10R0 ST3230C16R0 ST3230C14R0 ST |
Silicon Controlled Rectifier, 5970 A, 1400 V, SCR, RPUK-2
1800V 2785A Phase Control SCR in a A-36 (R-Puk) package
1000V 2785A Phase Control SCR in a A-36 (R-Puk) package
1600V 2785A Phase Control SCR in a A-36 (R-Puk) package
Stratix II GX FPGA 30K FPGA-780 1600V 2785A可控硅相位控制在 36（注册商标，北辰）封
1200V 2785A Phase Control SCR in a A-36 (R-Puk) package
|
Vishay Semiconductors
International Rectifier
|
| QRF1410T30 QRD1410T30 QR1410T30 QRC1410T30 |
Fast Recovery Diode Module (100 Amp/1400 Volts) 61 A, 1400 V, SILICON, RECTIFIER DIODE
128 x 128 pixel format, LED or EL Backlight available 快速恢复二极管模块100 Amp/1400伏特
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| 1014-12 |
12 W, 28 V, 1000-1400 MHz common base transistor
12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz
L BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
List of Unclassifed Manufacturers
ETC[ETC]
|
| T9GH1809C2DH H160922DH |
1400 A, 1800 V, SCR
1400 A, 1600 V, SCR
|
POWEREX INC
|
| MSKD36-12 MSKD36-18 |
Rectifier Modules 200-1800V
|
Microsemi
|
| APTDR40X1601G |
Rectifier Modules 200-1800V
|
Microsemi
|
| SHM100SMS |
50-250 mA 1500-14000 VOLTS 200 usec HIGH VOLTAGE RECTIFIER 0.1 A, 10000 V, SILICON, SIGNAL DIODE
|
Solid State Devices, Inc.
|
| 1214-370V |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 370; P(in) (W): 50; Gain (dB): 8.7; Vcc (V): 50; Pulse Width (µsec): 330; Duty Cycle (%): 10; Case Style: 55ST-1 RF POWER TRANSISTOR
370 Watts - 50 Volts, 330 μs, 10% Radar 1200 - 1400 MHz
|
STMicroelectronics N.V.
Microsemi Corporation
|
| MAAMSS0045 MAAMSS0045TR-3000 MAAMSS0045SMB |
1400 MHz - 2000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
HIGH DYNAMIC RANGE LOW NOISE AMPLIFIER 1400 - 2000 MHZ
|
MACOM[Tyco Electronics]
|
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| SDA312F SDA312B |
10 AMPS 5 usec STANDARD RECOVERY 3 PHASE BRIDGE ASSY 3 PHASE, 10 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
Solid State Devices, Inc.
SOLID STATE DEVICES INC
|
