| PART |
Description |
Maker |
| SDR803RTXV SDR804RTXV SDR805RTXV SDR806RTXV SDR807 |
100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier
|
Solid States Devices, Inc
|
| SDR506 SDR508 SDR510 |
50 AMP 50-800 VOLTS 45-60nsec ULTRA FAST RECTIFIER
|
Solid States Devices, Inc.
|
| SDR648CT-28 SDR647CT-28 |
2AMPS 700-800VOLTS 60nsec ULTRA FAST CENTERTAP RECTIFIER
|
Solid States Devices, Inc
|
| SDR959_3 SDR9510_3 SDR9511_3 SDR958_3 SDR958-3 SDR |
50 AMP 800-1100 VOLTS 80 nsec ULTRA FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
Solid States Devices, I...
|
| IRG5U100HF12B |
1200V 100A Ultra Fast IGBT Half-Bridge module packaged in POWIR 62 package
|
International Rectifier
|
| IRF1407L IRF1407S IRF1407STRR |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五（巴西）直| 100号A（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| R-11-055-P-S R-11-055-P-SFC R-11-055-P-SSC R-11-05 |
55um InGaAs PIN Photodiode Modules-pigtailed
FIBER OPTIC PHOTODIODE DETECTOR, 1100-1650nm, THROUGH HOLE MOUNT, ST/UPC CONNECTOR HEREMATICAL SEALED PACKAGE-3
FIBER OPTIC PHOTODIODE DETECTOR, 1100-1650nm, THROUGH HOLE MOUNT, ST/UPC CONNECTOR ROHS COMPLIANT, HEREMATICAL SEALED PACKAGE-3
FIBER OPTIC PHOTODIODE DETECTOR, 1100-1650nm, THROUGH HOLE MOUNT, SC/PC CONNECTOR
FIBER OPTIC PHOTODIODE DETECTOR, 1100-1650nm, PANEL MOUNT, SC/PC CONNECTOR
FIBER OPTIC PHOTODIODE DETECTOR, 1100-1650nm, PANEL MOUNT, ST/PC CONNECTOR
|
Source Photonics, Inc.
|
| LRDC-20-2J |
Directional Coupler 50Ω 300 to 1100 MHz
Directional Coupler 50楼? 300 to 1100 MHz
|
Mini-Circuits
|
| RHRU10060 FN3572 |
100A/ 600V Hyperfast Diode
100A, 600V Hyperfast Diode
100A 600V Hyperfast Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| IRF1407SPBF IRF1407LPBF IRF1407SPBF-15 |
HEXFET? Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078Ω , ID = 100A )
HEXFET㈢ Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078ヘ , ID = 100A )
Advanced Process Technology
|
International Rectifier
|
| BPW-34-BS |
Especially suitable for applications from 350 nm to 1100 nm
|
OSRAM GmbH
|
