| PART |
Description |
Maker |
| NESG2021M16-T3-A NESG2021M16 NESG2021M16-T3 |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CALMIRCO[California Micro Devices Corp]
|
| NESG2021M05 NESG2021M05-T1-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG3032M14-T3-A NESG3032M14-A |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
Renesas Electronics Corporation
|
| BFP750-15 |
High Linearity Low Noise SiGe:C NPN RF Transistor
|
Infineon Technologies A...
|
| NESG2046M33-T3-A NESG2046M33 NESG2046M33-A |
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
|
CEL[California Eastern Labs]
|
| BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| MAX2642 MAX2642EXT-T MAX2642-MAX2643 MAX2643 MAX26 |
900MHz SiGe, High-Variable IP3, Low-Noise Amplifier
From old datasheet system
900MHz SiGe, High IP3, Low-Noise Amplifiers
900MHz SiGe / High IP3 / Low-Noise Amplifiers
Hex inverters 14-SOIC 0 to 70
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maixm
Maxim Integrated Products, Inc.
|
| NESG210719-T1-A NESG210719-A |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
|
California Eastern Labs
|
| NESG2021M16 NESG2021M16-A NESG2021M16-T3 NESG2021M |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
California Eastern Labs
|
| 2SC5414 0640 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications
NPN Epitaxial Planar Silicon Transistors
From old datasheet system
|
SANYO[Sanyo Semicon Device]
|
| 2SC4703 2SC4703-T1 2SC4703-15 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
|
Renesas Electronics Corporation
|
