| PART |
Description |
Maker |
| CGA3318Z CGA3318Z-EVB1 CGA3318Z-EVB2 CGA3318ZSB CG |
DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER
|
RF Micro Devices
|
| SGB-2233 |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK High Reliability SiGe HBT Technology
|
RF Micro Devices
|
| NESG2030M04-T2 NESG2030M04 |
NONLINEAR MODEL
NPN SiGe HIGH FREQUENCY TRANSISTOR
NPN SiGe HIGH FREQUENCY TRANSISTOR npn型硅锗高频晶体管
|
NEC[NEC]
NEC, Corp.
|
| NESG2031M05-T1-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
|
| NESG2101M16-T3-A NESG2101M16 |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG2030M04-T2-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR npn型硅锗高频晶体管
|
Duracell
|
| 2SA1969 |
High-Frequency Medium-Output Amplifier, Medium-Current Ultrahigh-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| RQL1001JLTL-E RQL1001JLAQH |
SiGe MMIC High Frequency Low Noise Amplifier
|
http://
RENESAS[Renesas Electronics Corporation]
|
| HA31006ANP HA31006ANPTL-E |
SiGe MMIC High Frequency Low Noise Amplifier
|
Renesas Electronics Corporation
|
| NESG2101M05-T1 NESG2101M05 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC Corp.
NEC[NEC]
|
| 2SC4258 2SC425810 |
FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| MSG43004 |
SiGe HBT type For low-noise RF amplifier
|
Panasonic Semiconductor
|
