| PART |
Description |
Maker |
| MC-4532DA727PF-A75 MC-4532DA727EF-A75 MC-4532DA727 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
32M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168
|
NEC Corp.
NEC, Corp.
|
| MC-4532CC727XFA-A75 MC-4532CC727XFA |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 32M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
|
| MC-4532CD647 MC-4532CD647EF-A75 MC-4532CD647PF-A75 |
32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC Corp.
|
| MC-4532CC726XFA-A80 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
| MC-4532CD647XFA-A75 MC-4532CD647XFA |
32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
| MB82DP02183C-65L MB82DP02183C-65LPBT MB82DP02183C- |
32M Bit (2 M word 16 bit) Mobile Phone Application Specific Memory 2M X 16 STANDARD SRAM, 65 ns, UUC
32M Bit (2 M word 16 bit) Mobile Phone Application Specific Memory 2M X 16 STANDARD SRAM, 65 ns, PBGA71
32M Bit (2 M word × 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu, Ltd.
Fujitsu Component Limited.
|
| A29DL323TV-90 A29DL323UG-90 |
32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
|
http://
AMIC Technology Corporation
|
| M2V64S20BTP M2V64S20BTP-10 M2V64S20BTP-10L M2V64S2 |
64M bit Synchronous DRAM
4-BANK x 2097152-WORD x 8-BIT
4-BANK x 1048576-WORD x 16-BIT
4-BANK x 4194304-WORD x 4-BIT
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| UPD23C32000ALGY-MJH UPD23C32000ALGY-MKH UPD23C3200 |
Circular Connector; No. of Contacts:3; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:8; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:8-98 RoHS Compliant: No
32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) 32兆位掩膜可编程ROM的分位（字节模式 200万字6位（字模式）
|
NEC Corp.
NEC, Corp.
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| MB82DP02183C-65LWT MB82DP02183C-65L MB82DP02183C-6 |
32M Bit (2 M word 】 16 bit) Mobile Phone Application Specific Memory
|
FUJITSU[Fujitsu Media Devices Limited]
|
