PART |
Description |
Maker |
STE40NC60 |
N-CHANNEL 600V 0.098 OHM 40A ISOTOP POWERMESH II POWER MOSFET N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh⑩II MOSFET N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh?II MOSFET
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
STGY40NC60VD |
N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT N-channel 600V - 50A - Max247 Very fast PowerMESH⑩ IGBT
|
STMicroelectronics
|
STGY40NC60VD STGY40NC60V |
N-CHANNEL 50A - 600V MAX247 VERY FAST POWERMESH" IGBT N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH IGBT Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:220uF; Capacitance
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
STGY50NC60WD GY50NC60WD |
N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT
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STMICROELECTRONICS[STMicroelectronics]
|
RHRU5060 RHRU5050 FN3919 RHRU5040 |
50A, 400V - 600V Hyperfast Diodes 50A 400V - 600V Hyperfast Diodes From old datasheet system
|
HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation]
|
SSG50C120 SSG50C60 SSG50C100 SSG50C40 |
TRIAC|1.2KV V(DRM)|50A I(T)RMS|TO-208VARM8 TRIAC|600V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 600V的五(DRM)的| 50A条口(T)的有效值|08VARM8 TRIAC|1KV V(DRM)|50A I(T)RMS|TO-208VARM8 TRIAC|400V V(DRM)|50A I(T)RMS|TO-208VARM8
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50RIA40M 50RIA40S90 50RIA120 50RIA80S90M 50RIA 50R |
100V 50A Phase Control SCR in a TO-208AC (TO-65) package 800V 50A Phase Control SCR in a TO-208AC (TO-65) package 1000V 50A Phase Control SCR in a TO-208AC (TO-65) package 400V 50A Phase Control SCR in a TO-208AC (TO-65) package 1600V 80A Phase Control SCR in a TO-208AC (TO-65) package 1200V 50A Phase Control SCR in a TO-208AC (TO-65) package 1400V 80A Phase Control SCR in a TO-208AC (TO-65) package 600V 50A Phase Control SCR in a TO-208AC (TO-65) package MEDIUM POWER THYRISTORS Silicon Controlled Rectifier, 80 A, 1600 V, SCR, TO-208AC, TO-65, 2 PIN
|
IRF[International Rectifier] Vishay Semiconductors
|
APL602J |
Power MOSFET; Package: ISOTOP®; ID (A): 43; RDS(on) (Ohms): 0.125; BVDSS (V): 600; 43 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET LINEAR MOSFET 600V 43A 0.125?/a> LINEAR MOSFET 600V 43A 0.125з
|
Microsemi, Corp. Advanced Power Technology
|
PRHMB50A6A |
IGBT MODULE Chopper 50A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
PRHMB50A6 |
IGBT MODULE Chopper 50A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|