| PART |
Description |
Maker |
| EMD12324PV EMD12324PV-60 EMD12324PV-75 |
512M: 16M x 32 Mobile DDR SDRAM
|
Emerging Memory & Logic Solutions Inc
|
| EDD51321DBH-5BTS-F EDD51321DBH-6ETS-F EDD51321DBH- |
512M bits DDR Mobile RAM?/a> WTR (Wide Temperature Range)
512M bits DDR Mobile RAM垄芒 WTR (Wide Temperature Range)
|
Elpida Memory
|
| EDD51323DBH-5BLS-F EDD51323DBH-6ELS-F EDD51323DBH- |
512M bits DDR Mobile RAM?/a> WTR (Wide Temperature Range), Low Power Function
512M bits DDR Mobile RAM垄芒 WTR (Wide Temperature Range), Low Power Function
|
Elpida Memory
|
| K4X56163PG |
16M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
| K4X51323PC-7E K4X51323PC-7EC3 K4X51323PC-7GC3 K4X5 |
16M X32 MOBILE-DDR SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| MT46V32M8P-75ZATF MT46V16M16CV-5BK MT46V64M4 MT46V |
32M X 8 DDR DRAM, 0.75 ns, PDSO66 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66
16M X 16 DDR DRAM, 0.7 ns, PBGA60
Double Data Rate (DDR) SDRAM
|
Micron Technology
|
| HYB18L256160BCX-7.5 HYE18L256160BCX-7.5 |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Qimonda AG
|
| AS4DDR16M72-8_ET AS4DDR16M72-8_IT AS4DDR16M72-8_XT |
16M X 72 DDR DRAM, 0.8 ns, PBGA219
16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
|
Austin Semiconductor
|
| HYB25D128800T-7 HYB25D128800T-7.5 HYB25D128800TL-6 |
128Mb (16Mx8) DDR 266A (2-3-3)
128Mb (16Mx8) DDR 266B (2.5-3-3)
16M X 8 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
|
Infineon Technologies AG
|
| HYB18M512160BF-6 HYB18M512160BF-7.5 HYE18M512160BF |
DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
|
Qimonda AG
|
| HYB18M1G16 HYB18M1G160BF-7.5 HYE18M1G161BF-7.5 HYE |
1-Gbit x16 DDR Mobile-RAM 64M X 16 DDR DRAM, 5.5 ns, PBGA60
|
Qimonda AG
http://
|
| 23L51220-90 |
512M-BIT (16M x 32) MASK ROM WITH PAGE MODE (SSOP ONLY) (for socket solution only)
|
Macronix International Co., Ltd.
|
