PART |
Description |
Maker |
Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz) Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
INJ0011AU1 INJ0011AC1 INJ0011AM1 INJ0011AT2 INJ001 |
High speed switching Silicon P-channel MOSFET
|
Isahaya Electronics Corporation
|
HAT2215R-EL-E HAT2215R-15 |
3.4 A, 80 V, 0.145 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJM0306JSP-00-J0 RJM0306JSP10 |
Silicon N / P Channel Power MOS FET High Speed Power Switching 3.5 A, 30 V, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, SOP-8
|
Renesas Electronics Corporation
|
NTE2935 NTE2933 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET MOSFET N-Channel, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
NTE2942 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET MOSFET N-Channel, Enhancement Mode High Speed Switch
|
NTE Electronics, Inc. NTE[NTE Electronics]
|
RJL5020DPK RJL5020DPK-00-T0 |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
CPH6315 |
P-Channel Silicon MOSFET High-Speed Switching Applications
|
Sanyo Semicon Device
|
HS54095 HS54095TZ-E |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
H7N1004FM12 H7N1004FM-15 |
Silicon N-Channel MOSFET High-Speed Power Switching
|
Renesas Electronics Corporation
|
H5N2305PF |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation.
|