| PART |
Description |
Maker |
| 2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62
From old datasheet system
Medium Power Transistor (-32A,-1A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| LM317MDT LM317MS LM317MT LM317MX LM217M LM217MDT L |
MEDIUM CURRENT1.2 TO 37V ADJUSTABLE VOLTAGE REGULATORS
MEDIUM CURRENT 1.2 TO 37V ADJUSTABLE VOLTAGE REGULATOR
Medium Current 1.2 TO 37V Adjustable Volatage Regulator(中等电流.2V7V可调电压稳压 中等电流1.27V可调Volatage稳压器（中等电流，片山至1.2V的可调电压稳压器
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| SG2023 SG2023J_DESC SG2023N JAN2003J SG2003 SG2003 |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
From old datasheet system
Driver - Medium Current Array
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 2SA1900 A5800745 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
Medium Power Transistor (-50V, -1A)
|
ROHM
|
| 5082-2350 50822350 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
|
| BAT14-014 BAT14-034 BAT14-044 BAT14-064 BAT14-074 |
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) 硅肖特基二极管（培养基检测器和调音台的应用气密陶瓷封装垒二极管）
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters 砷化镓红外Lumineszenzdioden砷化镓红外辐射器
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
| CSA968A CSA968 CSA968B CSA968BO CSA968BY CSA968AY |
25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238AO
25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238AY
25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238BY
25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238BO
25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238B
25.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238
PNP PLASTIC POWER TRANSISTORS
Single-Phase Filter; Filter Type:RFI; Current Rating:16A; Voltage Rating:250V; Capacitance:1uF; Inductance:0.6uH; Mounting Type:Flange; Series:FN2060; Terminal Type:Quick Connect RoHS Compliant: Yes
|
Continental Device India Limited
|
| 2SD882S-X-AA3-R 2SD882S-X-AB3-R 2SD882S-X-T92-B 2S |
MEDIUM POWER LOW VOLTAGE TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MEDIUM POWER LOW VOLTAGE TRANSISTOR 中功率低电压晶体
|
??『绉???′唤??????
UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| BAT14-03 BAT14-03W Q62702-A1103 BAT1403W |
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
